[영문] CONTENTS
An Overview = 1
1 The Quantum Foundation
1.1 Electrons in a Nonuniform Potential, <TEX>$$E_co$$</TEX>(r) = 6
1.1.1 Probability Current = 11
1.2 Electrons in a Periodic Potential, <TEX>$$U_c$$</TEX>(r) = 13
1.2.1 Model Band Structure = 17
1.2.2 Band Structure of Semiconductor Alloys and Heterojunctions = 20
1.2.3 Counting States = 21
1.3 Electron Wave Propagation in Devices = 23
1.3.1 Quantum Confinement = 25
1.4 Semiclassical Electron Dynamics = 30
1.5 Scattering of Electrons by the Random Potential, <TEX>$$U_s$$</TEX>(r, t) = 32
1.5.1 Examples = 36
1.6 Lattice Vibrations (Phonons) = 38
1.7 Summary = 40
References = 40
Problems = 41
2 Carrier Scattering
2.1 Relaxation Times = 45
2.1.1 Example = 48
2.2 Scattering by Ionized Impurities = 49
2.2.1 Unscreened Coulomb Scattering = 54
2.2.2 Strongly Screened Coulomb Scattering = 56
2.2.3 Discussion = 56
2.3 Energy and Momentum Conservation in Phonon Scattering = 57
2.3.1 Intravalley Acoustic Phonon Scattering = 58
2.3.2 Intravalley Optical Phonon Scattering = 59
2.4 The Electron-Phonon Interaction = 60
2.5 Deformation Potential Scattering = 64
2.5.1 Optical Deformation Potential Scattering = 68
2.6 Polar Optical Phonon Scattering = 70
2.6.1 POP Energy Relaxation Time = 74
2.6.2 POP Momentum Relaxation Time = 74
2.7 Intervalley Scattering = 75
2.8 Carrier-Carrier and Plasmon Scattering = 77
2.9 Phonon Scattering of Confined Carriers = 81
2.10 Scattering Rates for Nonparabolic Energy Bands = 88
2.11 Electron Scattering in Intrinsic Si and GaAs = 89
2.12 Summary = 92
References = 94
Problems = 95
3 The Boltzmann Transport Equation
3.1 The Distribution Function, f(r, p, t) = 99
3.2 The Boltzmann Transport Equation = 106
3.3 The Collision Integral and the Relaxation Time Approximation = 109
3.3.1 The Relaxation Time Approximation = 110
3.4 Solving the BTE in the Relaxation Time Approximation = 112
3.4.1 Equilibrium = 112
3.4.2 Uniform Electric Field with a Constant Relaxation Time = 113
3.4.3 Uniform Electric Field with Energy-Dependent Relaxation Time = 115
3.5 Validity of the Relaxation Time Approximation = 118
3.6 Numerical Solution to the BTE = 122
3.7 Validity of the Boltzmann Transport Equation = 124
3.8 Summary = 126
References = 127
Problems = 127
4 Low-Field Transport
4.1 Low-Field Solution to the BTE (B＝0) = 131
4.2 The Coupled Current Equations = 133
4.3 Transport Coefficients = 137
4.3.1 Ellipsoidal Energy Bands = 139
4.3.2 Multiple Scattering Mechanisms = 141
4.4 Transport in a Weak Magnetic Field = 142
4.5 The Phenomenological Current Equations = 147
4.5.1 Inversion of the Transport Equations = 147
4.5.2 Taylor Series Expansions of Transport Tensors = 148
4.5.3 Transport Coefficients for Cubic Semiconductors = 150
4.6 Applications of the Phenomenological Equations = 151
4.6.1 Thermoelectric Effects = 152
4.6.2 Thermomagnetic Effects = 153
4.6.3 Galvanomagnetic Effects = 154
4.7 Low-Field Mobility of Electrons in Si and GaAs = 157
4.7.1 Low-Field Mobility Due to Ionized Impurity and Phonon Scattering = 157
4.7.2 Low-Field Mobility of Electrons in Silicon = 160
4.7.3 Low-Field Mobility of Electrons in Gallium Arsenide = 162
4.8 Summary = 164
References = 164
Problems = 165
5 Balance Equations
5.1 The Prescription = 171
5.2 Characteristic Times = 176
5.2.1 The Out-Scattering Rates = 177
5.3 The Balance Equations = 177
5.3.1 The Carrier Density Balance Equation = 177
5.3.2 The Momentum Balance Equation = 179
5.3.3 The Energy Balance Equation = 181
5.3.4 Discussion = 182
5.4 Carrier Temperature and Heat Flux = 182
5.5 Simplifications for Device Applications = 187
5.5.1 The Displaced Maxwellian Approximation = 189
5.5.2 Discussion = 191
5.6 Drift-Diffusion Equations = 191
5.6.1 Discussion = 193
5.7 Summary = 194
References = 195
Problems = 195
6 Monte Carlo Simulation
6.1 Particle Simulation = 202
6.2 Free Flight = 205
6.3 Identification of the Scattering Event = 210
6.4 Updating the Momentum After Scattering = 212
6.5 Simulation of Devices = 218
6.5.1 Many-Particle Monte Carlo = 219
6.5.2 Incident Flux Approach = 220
6.6 Monte Carlo Simulation and the BTE = 228
6.7 Summary = 230
References = 231
Problems = 231
7 High-Field Transport in Bulk Semiconductors
7.1 Qualitative Features of High-Field Transport = 235
7.2 The Electron Temperature Approach = 239
7.2.1 Solution by Balance Equations = 241
7.2.2 The Hot Carrier Mobility = 242
7.2.3 The Energy Relaxation Time = 244
7.3 The Monte Carlo Approach = 246
7.3.1 Monte Carlo Simulation of High-Field Electron Transport in Pure Si = 246
7.3.2 Monte Carlo Simulation of High-Field Electron Transport in Pure GaAs = 250
7.4 Some Experimental Results for Si and GaAs = 253
7.4.1 High-Field Electron Transport in Silicon = 253
7.4.2 High-Field Electron Transport in GaAs = 256
7.5 Summary = 258
References = 258
Problems = 260
8 Carrier Transport in Devices
8.1 The Drift-Diffusion Equation = 263
8.2 Ballistic Transport = 264
8.3 Velocity Overshoot = 268
8.4 Diffusion or Ensemble Effects = 272
8.5 Diffusion in Strong Concentration Gradients = 281
8.6 Built-in Fields = 283
8.7 Transport in Compositionally Nonuniform Semiconductors = 285
8.8 Device Simulation = 288
8.9.1 The Drift-Diffusion Approach = 290
8.8.2 The Momentum and Energy Balance Approach = 291
8.8.3 The Monte Carlo Approach = 297
8.9 Summary = 298
References = 300
Problems = 302
Appendix: Some Useful Integrals = 304
Index = 305
An Overview = 1
1 The Quantum Foundation
1.1 Electrons in a Nonuniform Potential, <TEX>$$E_co$$</TEX>(r) = 6
1.1.1 Probability Current = 11
1.2 Electrons in a Periodic Potential, <TEX>$$U_c$$</TEX>(r) = 13
1.2.1 Model Band Structure = 17
1.2.2 Band Structure of Semiconductor Alloys and Heterojunctions = 20
1.2.3 Counting States = 21
1.3 Electron Wave Propagation in Devices = 23
1.3.1 Quantum Confinement = 25
1.4 Semiclassical Electron Dynamics = 30
1.5 Scattering of Electrons by the Random Potential, <TEX>$$U_s$$</TEX>(r, t) = 32
1.5.1 Examples = 36
1.6 Lattice Vibrations (Phonons) = 38
1.7 Summary = 40
References = 40
Problems = 41
2 Carrier Scattering
2.1 Relaxation Times = 45
2.1.1 Example = 48
2.2 Scattering by Ionized Impurities = 49
2.2.1 Unscreened Coulomb Scattering = 54
2.2.2 Strongly Screened Coulomb Scattering = 56
2.2.3 Discussion = 56
2.3 Energy and Momentum Conservation in Phonon Scattering = 57
2.3.1 Intravalley Acoustic Phonon Scattering = 58
2.3.2 Intravalley Optical Phonon Scattering = 59
2.4 The Electron-Phonon Interaction = 60
2.5 Deformation Potential Scattering = 64
2.5.1 Optical Deformation Potential Scattering = 68
2.6 Polar Optical Phonon Scattering = 70
2.6.1 POP Energy Relaxation Time = 74
2.6.2 POP Momentum Relaxation Time = 74
2.7 Intervalley Scattering = 75
2.8 Carrier-Carrier and Plasmon Scattering = 77
2.9 Phonon Scattering of Confined Carriers = 81
2.10 Scattering Rates for Nonparabolic Energy Bands = 88
2.11 Electron Scattering in Intrinsic Si and GaAs = 89
2.12 Summary = 92
References = 94
Problems = 95
3 The Boltzmann Transport Equation
3.1 The Distribution Function, f(r, p, t) = 99
3.2 The Boltzmann Transport Equation = 106
3.3 The Collision Integral and the Relaxation Time Approximation = 109
3.3.1 The Relaxation Time Approximation = 110
3.4 Solving the BTE in the Relaxation Time Approximation = 112
3.4.1 Equilibrium = 112
3.4.2 Uniform Electric Field with a Constant Relaxation Time = 113
3.4.3 Uniform Electric Field with Energy-Dependent Relaxation Time = 115
3.5 Validity of the Relaxation Time Approximation = 118
3.6 Numerical Solution to the BTE = 122
3.7 Validity of the Boltzmann Transport Equation = 124
3.8 Summary = 126
References = 127
Problems = 127
4 Low-Field Transport
4.1 Low-Field Solution to the BTE (B＝0) = 131
4.2 The Coupled Current Equations = 133
4.3 Transport Coefficients = 137
4.3.1 Ellipsoidal Energy Bands = 139
4.3.2 Multiple Scattering Mechanisms = 141
4.4 Transport in a Weak Magnetic Field = 142
4.5 The Phenomenological Current Equations = 147
4.5.1 Inversion of the Transport Equations = 147
4.5.2 Taylor Series Expansions of Transport Tensors = 148
4.5.3 Transport Coefficients for Cubic Semiconductors = 150
4.6 Applications of the Phenomenological Equations = 151
4.6.1 Thermoelectric Effects = 152
4.6.2 Thermomagnetic Effects = 153
4.6.3 Galvanomagnetic Effects = 154
4.7 Low-Field Mobility of Electrons in Si and GaAs = 157
4.7.1 Low-Field Mobility Due to Ionized Impurity and Phonon Scattering = 157
4.7.2 Low-Field Mobility of Electrons in Silicon = 160
4.7.3 Low-Field Mobility of Electrons in Gallium Arsenide = 162
4.8 Summary = 164
References = 164
Problems = 165
5 Balance Equations
5.1 The Prescription = 171
5.2 Characteristic Times = 176
5.2.1 The Out-Scattering Rates = 177
5.3 The Balance Equations = 177
5.3.1 The Carrier Density Balance Equation = 177
5.3.2 The Momentum Balance Equation = 179
5.3.3 The Energy Balance Equation = 181
5.3.4 Discussion = 182
5.4 Carrier Temperature and Heat Flux = 182
5.5 Simplifications for Device Applications = 187
5.5.1 The Displaced Maxwellian Approximation = 189
5.5.2 Discussion = 191
5.6 Drift-Diffusion Equations = 191
5.6.1 Discussion = 193
5.7 Summary = 194
References = 195
Problems = 195
6 Monte Carlo Simulation
6.1 Particle Simulation = 202
6.2 Free Flight = 205
6.3 Identification of the Scattering Event = 210
6.4 Updating the Momentum After Scattering = 212
6.5 Simulation of Devices = 218
6.5.1 Many-Particle Monte Carlo = 219
6.5.2 Incident Flux Approach = 220
6.6 Monte Carlo Simulation and the BTE = 228
6.7 Summary = 230
References = 231
Problems = 231
7 High-Field Transport in Bulk Semiconductors
7.1 Qualitative Features of High-Field Transport = 235
7.2 The Electron Temperature Approach = 239
7.2.1 Solution by Balance Equations = 241
7.2.2 The Hot Carrier Mobility = 242
7.2.3 The Energy Relaxation Time = 244
7.3 The Monte Carlo Approach = 246
7.3.1 Monte Carlo Simulation of High-Field Electron Transport in Pure Si = 246
7.3.2 Monte Carlo Simulation of High-Field Electron Transport in Pure GaAs = 250
7.4 Some Experimental Results for Si and GaAs = 253
7.4.1 High-Field Electron Transport in Silicon = 253
7.4.2 High-Field Electron Transport in GaAs = 256
7.5 Summary = 258
References = 258
Problems = 260
8 Carrier Transport in Devices
8.1 The Drift-Diffusion Equation = 263
8.2 Ballistic Transport = 264
8.3 Velocity Overshoot = 268
8.4 Diffusion or Ensemble Effects = 272
8.5 Diffusion in Strong Concentration Gradients = 281
8.6 Built-in Fields = 283
8.7 Transport in Compositionally Nonuniform Semiconductors = 285
8.8 Device Simulation = 288
8.9.1 The Drift-Diffusion Approach = 290
8.8.2 The Momentum and Energy Balance Approach = 291
8.8.3 The Monte Carlo Approach = 297
8.9 Summary = 298
References = 300
Problems = 302
Appendix: Some Useful Integrals = 304
Index = 305